SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB649 2SB649A
DESCRIPTION
·With TO-126 package
·Complement to type 2SD669/669A
·High breakdown voltage V
CEO:
-120/-160V
·High current -1.5A
·Low saturation voltage,excellent h
FE
linearity
APPLICATIONS
·For low-frequency power
amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
PARAMETER
2SB649
Collector-base voltage
2SB649A
2SB649
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
Collector-emitter voltage
2SB649A
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
a
=25
T
C
=25
Open collector
Open base
-160
-5
-1.5
-3
1
W
20
150
-55~150
V
A
A
Open emitter
-180
-120
V
CONDITIONS
VALUE
-180
V
UNIT