SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
DC current gain
DC current gain
Output capacitance
CONDITIONS
I
C
=-50mA; R
BE
=:
I
E
=-5mA; I
C
=0
I
C
=-0.5 A;I
B
=-50m A
I
C
=-50mA ; V
CE
=-4V
V
CB
=-120V; I
E
=0
I
C
=-50mA ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-10V
I
E
=0 ;V
CB
=-100V,f=1MHz
60
60
30
MIN
-150
-6
TYP.
2SB861
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
h
FE-1
h
FE-2
C
OB
MAX
UNIT
V
V
-3.0
-1.0
-1
200
V
V
µA
pF
h
FE-1
classifications
B
60-120
C
100-200
2
SAVANTIC [ Savantic, Inc. ]
