SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-1mA ;I
B
=0
I
C
=-50µA ;I
E
=0
I
E
=-50µA ;I
C
=0
I
C
=-2.0A; I
B
=-0.2A
V
CB
=-20V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.5A ; V
CE
=-3V
I
C
=-0.5A ; V
CE
=-5V;f=30MHz
I
E
=0; f=1MHz ; V
CB
=-10V
82
MIN
-32
-40
-5
2SB891F
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
V
V
-0.5
-0.8
-1.0
-1.0
390
V
µA
µA
100
50
MHz
pF
h
FE-2
Classifications
P
82-180
Q
120-270
R
180-390
2
SAVANTIC [ Savantic, Inc. ]
