SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SB940
I
C
=-5mA ,I
B
=0
2SB940A
I
C
=-50µA ,I
E
=0
I
C
=-500µA ,I
C
=0
I
C
=-0.5A, I
B
=-50mA
I
C
=-0.4A ; V
CE
=-10V
V
EB
=-4V; I
C
=0
V
CB
=-200V; I
E
=0
I
C
=-0.15A ; V
CE
=-10V
I
C
=-0.4A ; V
CE
=-10V
I
C
=-0.5A; V
CE
=-10V,f=10MHz
CONDITIONS
2SB940,2SB940A
SYMBOL
MIN
-150
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-180
-200
-6
-1.0
-1.0
-50
-50
60
50
30
MHz
240
V
V
V
V
µA
µA
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
EBO
I
CBO
h
FE-1
h
FE-2
f
T
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Emitter cut-off current
Collector cut-off current
DC current gain
DC current gain
Transition frequency
h
FE-1
Classifications
Q
60-140
P
100-240
2
SAVANTIC [ Savantic, Inc. ]
