SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.1A ; I
B
=0
I
E
=1mA ; I
C
=0
I
C
=2.5A; I
B
=0.8A
I
C
=2.5A; I
B
=0.8A
V
CB
=600V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1 A ; V
CE
=5V
8
MIN
800
6
2SC1942
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
5.0
1.5
10
10
40
V
V
µA
µA
2