SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SC1985
I
C
=25mA ,I
B
=0
2SC1986
V
CEsat
Collector-emitter saturation voltage
2SC1985
2SC1986
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
I
C
=3A; I
B
=0.3A
V
CB
=80V; I
E
=0
CONDITIONS
2SC1985 2SC1986
SYMBOL
MIN
60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
80
1.0
V
I
CBO
Collector
cut-off current
1.0
V
CB
=100V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=1A ; V
CE
=4V
I
C
=0.5A ; V
CE
=12V
40
10
1.0
mA
mA
MHz
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
I
C
=3A ; V
CC
=9V
I
B1
=-I
B2
=0.3A;R
L
=3C
1.1
1.8
0.55
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
