SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=25mA ; I
B
=0
I
C
=1A; I
B
=0.2A
V
CB
=300V ;I
E
=0
V
EB
=6V; I
C
=0
I
C
=0.5 A ; V
CE
=4V
I
C
=0.2A ; V
CE
=12V
f=1MHz ; V
CB
=10V
30
MIN
300
2SC2023
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
ob
TYP.
MAX
UNIT
V
1.0
1.0
1.0
V
mA
mA
10
75
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1A, I
B1
=0.1A
I
B2
=-0.2A; V
CC
=100V
R
L
=100@
0.30
4.00
1.00
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
