SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Collector-emitter sustaining voltage
V
CEO(sus)
=400V(Min)
·Collector-emitter saturation voltage
V
CE(sat)
=1.0V(Max.)@I
C
=3.0A,I
B
=0.6A
·Switching time-t
f
=1.0µs(Max.)@I
C
=3.0A
APPLICATIONS
·Designed for use in high-voltage ,high-
speed ,power switching in inductive circuit,
particularly suited for 115 and 220V switch-
mode applications such as switching
regulator’s ,inverters,,DC-DC and converter
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC2335
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
7
15
3.5
40
150
-50~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
3.125
UNIT
/W