SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter voltage
Emitter-base voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=5A; I
B
=0.5 A
I
C
=5A; I
B
=0.5 A
I
C
=30mA; I
B
=0
I
E
=1.0mA; I
C
=0
V
CB
=150V;I
E
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=5V
I
C
=0.1A ; V
CE
=5V;f=3.0MHz
15
5.0
100
7
MIN
2SC2373
SYMBOL
V
CEsat
V
BEsat
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
1.5
1.5
UNIT
V
V
V
V
10
10
70
µA
µA
MHz
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
V
CC
=20V;I
C
=5.0A
I
B1
=-I
B2
=0.6A
PW=20µs
1.0
2.5
1.0
µs
µs
µs
h
FE
classifications
M
15-35
L
25-45
K
35-70
2
SAVANTIC [ Savantic, Inc. ]
