SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(I) package
·High collector breakdown voltage
V
CEO
=400V(Min)
·Excellent switching times
: t
r
=1.0µs(Max.) t
f
=1.0µs(Max.)@ I
C
=4A
APPLICATIONS
·Switching regulator and high voltage
switching applications
·High speed DC-DC converter applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC2555
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-peak
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
80
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
8
10
4
2.5
W
UNIT
V
V
V
A
A
A
SAVANTIC [ Savantic, Inc. ]
