SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=1A ;I
B
=0
I
C
=1mA ;I
E
=0
I
E
=0.1mA ;I
C
=0
I
C
=4A; I
B
=0.8A
I
C
=4A ;I
B
=0.8A
V
CB
=450V I
E
=0
V
EB
=7V; I
C
=0
I
C
=4A ; V
CE
=5V
10
MIN
400
400
450
7
2SC2625
SYMBOL
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
V
1.2
1.5
1.0
0.1
V
V
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=7.5A; I
B1
=-I
B2
=1.5A
R
L
=20B,Pw=20µs
DutyC2%
1.0
2.0
1.0
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
