SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A ; R
BE
=9;L=100mH
I
E
=10mA ; I
C
=0
I
C
=2.5A; I
B
=0.5A
I
C
=2.5A; I
B
=0.5A
V
CB
=400V ;I
E
=0
V
CE
=350V ; R
BE
=9
I
C
=2.5 A ; V
CE
=5V
I
C
=5 A ; V
CE
=5V
15
7
MIN
400
7
2SC2816
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
1.0
1.5
50
50
V
V
µA
µA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A; I
B1
=-I
B2
=1A
V
CC
=150V
0.5
1.5
0.5
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
