SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3039
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
400
500
7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=5mA ;RBE=∞
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=1mA; IE=0
V
IE=1mA; IC=0
V
IC=4A; IB=0.8A
IC=4A; IB=0.8A
VCB=400V ;IE=0
VEB=5V; IC=0
1.0
1.5
10
V
V
µA
µA
IEBO
Emitter cut-off current
10
hFE-1
DC current gain
IC=0.8A ; VCE=5V
IC=4A ; VCE=5V
IC=0.8A ; VCE=10V
f=1MHz ; VCB=10V
15
8
50
hFE-2
DC current gain
fT
Transition frequency
20
80
MHz
pF
Cob
Collector output capacitance
Switching times
ton Turn-on time
ts
1.0
2.5
1.0
µs
µs
µs
IC=5A, IB1=1A
IB2=-1A; VCC=200V
RL=40Ω
Storage time
Fall time
tf
ꢀ hFE-1 classifications
L
M
N
15-30
20-40
30-50
2
SAVANTIC [ Savantic, Inc. ]
