SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=5mA ;R
BE
=;
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=6A ;I
B
=1.2A
I
C
=6A ;I
B
=1.2A
V
CB
=400V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1.2A ; V
CE
=5V
I
C
=6A ; V
CE
=5V
I
C
=1.2A ; V
CE
=10V
I
E
=0 ; V
CB
=10V;f=1MHz
15
8
MIN
400
500
7
2SC3277
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
TYP.
MAX
UNIT
V
V
V
1.0
1.5
10
10
50
V
V
µA
µA
20
120
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=7A;I
B1
=-I
B2
=1.4A
R
L
=28.6E,P
W
=20µs
V
CC
=200V
1.0
2.5
1.0
µs
µs
µs
h
FE-1
Classifications
L
15-30
M
20-40
N
30-50
2
SAVANTIC [ Savantic, Inc. ]
