SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=1mA ;I
E
=0
I
C
=2A ;I
B
=0.4A
I
C
=2A ;I
B
=0.4A
V
CB
=900V; I
E
=0
V
EB
=10V; I
C
=0
I
C
=2A ; V
CE
=5V
10
MIN
700
900
2SC3505
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
0.5
1.2
1.0
1.0
V
V
mA
mA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=3A;I
B1
=0.6A;I
B2
=-1.2A
R
L
=100D,P
W
=20µs
DutyE2%
1.0
5.0
1.0
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
