SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SA1386
I
C
=25mA ;I
B
=0
2SA1386A
I
C
=5A ;I
B
=0.5A
V
CB
=160V; I
E
=0
CONDITIONS
2SC3519 2SC3519A
SYMBOL
MIN
160
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
180
2.0
V
V
CEsat
Collector-emitter saturation voltage
2SA1386
2SA1386A
I
CBO
Collector
cut-off current
100
V
CB
=180V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=4V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=2A ; V
CE
=12V
50
250
50
100
180
µA
I
EBO
h
FE
C
ob
f
T
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
µA
pF
MHz
Switching times
t
on
t
s
t
f
Rise time
Storage
time
Fall time
I
C
=10A;R
L
=4B
I
B1
=- I
B2
=1A
V
CC
=40V
0.20
1.30
0.45
µs
µs
µs
h
FE
Classifications
O
50-100
P
70-140
Y
90-180
2
SAVANTIC [ Savantic, Inc. ]
