SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.1A ;I
B
=0
I
C
=8A ;I
B
=2A
I
C
=8A ;I
B
=2A
V
CB
=800V ;I
E
=0
V
CE
=1500V; R
BE
=0
V
EB
=4V ;I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=8A ; V
CE
=5V
8
4
MIN
800
2SC3897
SYMBOL
V
(SUS)CEO
V
CEsat
V
BEsat
I
CBO
I
CES
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
5.0
1.5
10
1.0
1.0
V
V
µA
mA
mA
8
Switching times
t
stg
t
f
Storage time
Fall time
3.0
0.1
0.2
µs
µs
I
C
=6A ; V
CC
=200V
I
B1
=1.2A; I
B2
=2.4A
R
L
=33.3@
2
SAVANTIC [ Savantic, Inc. ]
