SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=5 A;I
B
=0.5A
I
C
=3A ; V
CE
=5V
V
CB
=80V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
E
=0; V
CB
=10V;f=1MHz
55
35
MIN
80
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
2SC5196
TYP.
MAX
UNIT
V
2.0
1.5
5
5
160
V
V
µA
µA
30
75
MHz
pF
h
FE-1
classifications
R
55-110
O
80-160
2
SAVANTIC [ Savantic, Inc. ]
