SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5386
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector output capacitance
Transition frequency
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=6A; I
B
=1.5A
I
C
=6A; I
B
=1.5A
V
CB
=1500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=6A ; V
CE
=5V
I
E
=0 ; V
CB
=10V,f=1MHz
I
E
=0.1A ; V
CE
=10V
15
4.3
105
1.7
MIN
600
3.0
1.5
1.0
10
35
7.5
pF
MHz
TYP.
MAX
UNIT
V
V
V
mA
µA
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
Switching times
t
s
t
f
Storage time
Fall time
2.5
0.15
3.5
0.3
µs
µs
I
CP
=5A;I
B1(
end
)
=1.0A
f
H
=64kHz
2