SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=50mA ;R
BE
=<
I
C
=5mA ;I
E
=0
I
C
=7A ;I
B
=14mA
I
C
=7A ;I
B
=14mA
V
CB
=40V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=7A ; V
CE
=2V
I
C
=7A ; V
CE
=5V
2000
MIN
60
70
2SD1193
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
1.5
2.0
0.1
3
V
V
mA
mA
20
MHz
2
SAVANTIC [ Savantic, Inc. ]
