SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1887
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEsat
VBEsat
VCEO(SUS)
IEBO
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter sustaining voltage
Emitter cut-off current
Collector cut-off current
Collector cut-off current
DC current gain
CONDITIONS
IC=8A;IB=1.6 A
MIN
TYP.
MAX
5
UNIT
V
IC=8A;IB=1.6 A
IC=100mA;IB=0
VEB=4V; IC=0
1.5
V
800
V
1
10
1
mA
µA
mA
ICBO
VCB=800V; IE=0
VCE=1500V; RBE=0
IC=1 A ; VCE=5V
IC=8A ; VCE=5V
ICES
hFE-1
8
5
hFE-2
DC current gain
10
IC=6A;RL=33.3Ω; IB1=1.2A
IB2=-2.4AVCC=200V
tf
Fall time
0.1
0.3
µs
2
SAVANTIC [ Savantic, Inc. ]
