SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1913
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VBE
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
IC=1mA; IE=0
MIN
60
60
6
TYP.
MAX
UNIT
V
IC=5mA; RBE=∞
IE=1mA; IC=0
V
V
IC=2A ; IB=0.2A
IC=0.5A ; VCE=5V
VCB=40V;IE=0
0.4
0.8
1.0
1.0
0.1
0.1
280
V
V
ICBO
Collector cut-off current
Emitter cut-off current
mA
mA
IEBO
VEB=4V;IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=5V
IC=3A ; VCE=5V
IC=0.5A ; VCE=5V
IE=0 ; VCB=10V; f=1MHz
70
20
hFE-2
DC current gain
fT
Transition frequency
100
40
MHz
pF
Cob
Output capacitance
ꢀ hFE-1 classifications
Q
R
S
70-140 100-200 140-280
2
SAVANTIC [ Savantic, Inc. ]
