SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2155
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
Collector-emitter breakdown voltage IC=50mA ;IB=0
180
V
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=8A ;IB=0.8A
IC=6A ; VCE=5V
VCB=180V; IE=0
VEB=5V; IC=0
2.0
1.5
5
V
V
ICBO
µA
µA
IEBO
5
hFE-1
hFE-2
fT
IC=1A ; VCE=5V
IC=6A ; VCE=5V
IC=1A ; VCE=5V
IC=0; f=1MHz;VCB=10V
55
30
160
DC current gain
Transition frequency
10
MHz
pF
COB
Collector output capacitance
160
ꢀ hFE-1 classifications
R
O
55-110
80-160
2
SAVANTIC [ Savantic, Inc. ]
