SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD555
DESCRIPTION
·With TO-3 package
·High power dissipation
·Complement to type 2SB600
APPLICATIONS
·For high speed ,high current ,high power
applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
250
200
5
10
200
150
-55~200
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
VALUE
1.46
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
