SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SD633
I
C
=50mA; I
B
=0
2SD635
I
C
=3A; I
B
=6mA
I
C
=7A; I
B
=14mA
I
C
=3A; I
B
=6mA
V
CB
=100V; I
E
=0
CONDITIONS
2SD633 2SD635
SYMBOL
MIN
100
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
60
1.5
2.0
2.5
V
V
V
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SD633
2SD635
I
CBO
Collector
cut-off current
100
V
CB
=60V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=3V
I
C
=7A ; V
CE
=3V
2000
1000
3.0
15000
µA
I
EBO
h
FE-1
h
FE-2
Emitter cut-off current
DC current gain
DC current gain
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=6mA
V
CC
=45V;R
L
=15A
0.8
3.0
2.5
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
