SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=10mA; I
B
=0
I
C
=3A; I
B
=6mA
I
C
=3A; I
B
=6mA
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=2V
I
C
=3A ; V
CE
=2V
2000
1000
MIN
80
TYP.
2SD686
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
MAX
UNIT
V
1.5
2.0
20
2.5
V
V
µA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=6mA
V
CC
=30V;R
L
=10@
0.2
1.5
0.6
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
