SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
2SD820
SYMBOL
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A; I
B
=0
600
V
V
CEsat
Collector-emitter saturation voltage
I
C
=4 A;I
B
=0.8 A
3.0
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=4 A;I
B
=0.8 A
1.5
V
I
CBO
Collector cut-off current
V
CB
=500V;I
E
=0
10
µA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
1
mA
h
FE
DC current gain
I
C
=1A ; V
CE
=5V
8
20
C
OB
Output capacitance
I
E
=0; V
CB
=10V;f=1MHz
165
pF
f
T
Transition frequency
I
C
=0.1A ; V
CE
=10V
3
MHz
t
f
Fall time
I
CP
=4A ;I
B1
=0.8A
0.5
1.0
µs
2
SAVANTIC [ Savantic, Inc. ]
