SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=1A ; I
B
=0
I
C
=10mA ; I
B
=0
I
C
=0.1mA ; I
E
=0
I
E
=10mA ; I
C
=0
I
C
=2A;I
B
=2mA
I
C
=2A;I
B
=2mA
V
CB
=250V; I
E
=0
V
EB
=10V; I
C
=0
I
C
=2A ; V
CE
=2V
1500
MIN
180
200
250
10
SYMBOL
V
CEO(SUS)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
2SD834
TYP.
MAX
UNIT
V
V
V
V
1.5
2.0
0.1
10
V
V
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=2A;I
B1
=-I
B2
=5mA; R
L
=10C
PW=20µs;DutyD2%
1.7
15.0
18.0
µs
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
