SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD241/A/B/C
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
45
TYP.
MAX
UNIT
BD241
BD241A
BD241B
BD241C
60
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=30mA; IB=0
V
80
100
VCEsat
VBE
Collector-emitter saturation voltage
Base-emitter on voltage
IC=3A;IB=0.6 A
IC=3A ; VCE=4V
VCE=30V; IB=0
1.2
1.8
V
V
BD241/A
Collector cut-off current
BD241B/C
ICEO
0.3
mA
V
CE=60V; IB=0
BD241
VCE=45V; VBE=0
VCE=60V; VBE=0
VCE=80V; VBE=0
BD241A
Collector cut-off current
BD241B
ICES
0.2
mA
mA
BD241C
Emitter cut-off current
DC current gain
VCE=100V; VBE=0
IEBO
hFE-1
hFE-2
VEB=5V; IC=0
1
IC=1A ; VCE=4V
IC=3A ; VCE=4V
25
10
DC current gain
2
SAVANTIC [ Savantic, Inc. ]
