SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD250/A/B/C
DESCRIPTION
·With TO-3PN package
·Complement to type BD249/A/B/C
·125 W at 25°C case temperature
·25 A continuous collector current
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
PARAMETER
BD246
V
CBO
Collector-base voltage
BD246A
BD246B
BD246C
BD246
V
CEO
Collector-emitter voltage
BD246A
BD246B
BD246C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Collector emitter
CONDITIONS
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-25
-40
-5
125
-65~150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
