SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD646/648/650/652
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-60
TYP.
MAX
UNIT
BD646
BD648
BD650
BD652
-80
Collector-emitter
breakdown voltage
V(BR)CEO
IC=-30mA, IB=0
V
-100
-120
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
IC=-3A ,IB=-12mA
IC=-5A ,IB=-50mA
IC=-5A ,IB=-50mA
IC=-3A ; VCE=-3V
-2.0
-2.5
-3.0
-2.5
V
V
V
V
VCB=-60V, IE=0
VCB=-40V, IE=0 ;TC=150ꢀ
-0.2
-2.0
BD646
VCB=-80V, IE=0
VCB=-50V, IE=0 ;TC=150ꢀ
-0.2
-2.0
BD648
Collector cut-off current
BD650
ICBO
mA
VCB=-100V, IE=0
VCB=-60V, IE=0 ;TC=150ꢀ
-0.2
-2.0
VCB=-120V, IE=0
VCB=-70V, IE=0 ;TC=150ꢀ
-0.2
-2.0
BD652
BD646
VCE=-30V, IB=0
VCE=-40V, IB=0
VCE=-50V, IB=0
VCE=-60V, IB=0
VEB=-5V; IC=0
IC=-3A ; VCE=-3V
BD648
Collector cut-off current
BD650
ICEO
-0.5
-5
mA
mA
BD652
Emitter cut-off current
DC current gain
IEBO
hFE
750
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
2.0
UNIT
ꢀ/W
Rth j-c
Thermal resistance junction to case
2
SAVANTIC [ Savantic, Inc. ]
