SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type BD810
·DC current gain
:
h
FE
= 30 (Min) @ I
C
= 2.0 Adc
APPLICATIONS
·Designed for use in high power audio
amplifiers utilizing complementary or
quasi complementary circuits.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BD809
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
80
80
5
10
6
90
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.39
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
