SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD910 BD912
DESCRIPTION
·With TO-220C package
·Complement to type BD909 BD911
APPLICATIONS
·Intented for use in power linear
and switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
PARAMETER
BD910
Collector-base voltage
BD912
BD910
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Collector-emitter voltage
BD912
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
-25
Open collector
Open base
-100
-5
-15
-5
90
150
-65~150
V
A
A
W
Open emitter
-100
-80
V
CONDITIONS
VALUE
-80
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.4
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
