SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BDV65
Collector-emitter
breakdown voltage
BDV65A
I
C
=30mA, I
B
=0
BDV65B
BDV65C
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
BDV65
Collector
cut-off current
BDV65A
BDV65B
BDV65C
BDV65
Collector
cut-off current
BDV65A
BDV65B
BDV65C
I
EBO
h
FE
V
EC
Emitter cut-off current
DC current gain
Diode forward voltage
I
C
=5A ,I
B
=20mA
I
C
=5A ; V
CE
=4V
V
CB
=60V, I
E
=0
V
CB
=30V, I
E
=0;T
C
=150
V
CB
=80V, I
E
=0
V
CB
=40V, I
E
=0;T
C
=150
V
CB
=100V, I
E
=0
V
CB
=50V, I
E
=0;T
C
=150
V
CB
=120V, I
E
=0
V
CB
=60V, I
E
=0;T
C
=150
V
CE
=30V, I
B
=0
V
CE
=40V, I
B
=0
CONDITIONS
SYMBOL
BDV65/65A/65B/65C
MIN
60
80
TYP.
MAX
UNIT
V
(BR)CEO
V
100
120
2.0
2.5
0.4
2.0
0.4
2.0
0.4
2.0
0.4
2.0
mA
V
V
I
CBO
I
CEO
2
V
CE
=50V, I
B
=0
V
CE
=60V, I
B
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=4V
I
E
=10A
1000
3.5
5
mA
mA
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.0
UNIT
/W
2
SAVANTIC [ Savantic, Inc. ]
