SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX34/A/B/C
APPLICATIONS
·For power linear and switching
applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BDX33/A/B/C
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BDX33
V
CBO
Collector-base voltage
BDX33A
BDX33B
BDX33C
BDX33
V
CEO
Collector-emitter voltage
BDX33A
BDX33B
BDX33C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
45
60
80
100
45
60
80
100
5
10
15
0.25
70
150
-65~150
V
A
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.78
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
