SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BDX53
Collector-emitter
sustaining voltage
BDX53A
I
C
=0.1A, I
B
=0
BDX53B
BDX53C
V
CEsat
V
BE sat
Collector-emitter saturation voltage
Base-emitter saturation voltage
BDX53
BDX53A
I
CBO
Collector cut-off current
BDX53B
BDX53C
BDX53
BDX53A
I
CEO
Collector cut-off current
BDX53B
BDX53C
I
EBO
h
FE
V
F-1
V
F-2
Emitter cut-off current
DC current gain
Forward diode voltage
Forward diode voltage
V
CE
=40V, I
B
=0
V
CE
=50V, I
B
=0
V
EB
=5V; I
C
=0
I
C
=3A ; V
CE
=3V
I
F
=3A
I
F
=8A
750
V
CB
=80V, I
E
=0
V
CB
=100V, I
E
=0
V
CE
=22V, I
B
=0
V
CE
=30V, I
B
=0
I
C
=3A ,I
B
=12mA
I
C
=3A ,I
B
=12mA
V
CB
=45V, I
E
=0
V
CB
=60V, I
E
=0
80
100
CONDITIONS
MIN
45
60
SYMBOL
BDX53/A/B/C
TYP.
MAX
UNIT
V
CEO(SUS)
V
2.0
2.5
V
V
0.2
mA
0.5
mA
2.0
mA
1.8
2.5
2.5
V
V
2
SAVANTIC [ Savantic, Inc. ]
