SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX65B
DESCRIPTION
·With TO-3 package
·DARLINGTON
·Complement to type BDX64B
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(peak)
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
100
5
12
16
0.2
117
-55~200
-55~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.5
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
