SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
BU2515AF
SYMBOL
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0
700
V
V
EBO
Emitter-base breakdown voltage
I
E
=1mA ;I
C
=0
7.5
13.5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=4.5A ;I
B
=0.9A
5.0
V
V
BEsat
Emitter-base saturation voltage
I
C
=4.5A ;I
B
=0.9A
V
CE
=BV
CES;
V
BE
=0
T
j
=125
V
EB
=7.5V; I
C
=0
1.0
1.0
2.0
1.0
V
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
I
C
=0.5A ; V
CE
=5V
17.2
h
FE-2
DC current gain
I
C
=4.5A ; V
CE
=5V
5
10.8
2
SAVANTIC [ Savantic, Inc. ]
