SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector capacitance
CONDITIONS
I
C
=100mA ;I
B
=0,L=25mH
I
E
=1mA ;I
C
=0
I
C
=8A ;I
B
=1.6 A
I
C
=8A ;I
B
=1.6 A
V
CE
=BV
CES;
V
BE
=0
T
j
=125
V
EB
=7.5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=8A ; V
CE
=5V
I
E
=0; f=1MHz;V
CB
=10V
5
MIN
800
7.5
BU2525AW
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE-1
h
FE-2
C
C
TYP.
MAX
UNIT
V
13.5
5.0
1.3
1.0
2.0
1.0
13
7
145
9.5
V
V
V
mA
mA
pF
2
SAVANTIC [ Savantic, Inc. ]
