SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU406 BU407
DESCRIPTION
·With TO-220C package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·For use in horizontal deflection output
stages of TV’s and CTV’s circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
PARAMETER
BU406
Collector-base voltage
BU407
BU406
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
Collector-emitter voltage
BU407
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
150
6
7
10
4
60
150
-65~150
V
A
A
A
W
Open emitter
330
200
V
CONDITIONS
VALUE
400
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
2.08
UNIT
/W