SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV27
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat-1
VCEsat-2
VBEsat
PARAMETER
CONDITIONS
MIN
120
7
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH
Emitter-base breakdown voltage
IE=50mA; IC=0
30
0.7
1.5
2
V
Collector-emitter saturation voltage IC=4A ;IB=0.4 A
Collector-emitter saturation voltage IC=8A; IB=0.8A
V
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=8A; IB=0.8A
V
VCE =240V;VBE = -1.5 V
TC=125ꢀ
ICEX
1
mA
mA
IEBO
VEB=5V; IC=0
1
Switching times resistive load
ton
Turn-on time
Storage time
Fall time
0.4
0.5
0.8
1.2
ms
µs
µs
IC=8A;IB1=0.8A;VCC=90V
VBE = - 6V;RBB = 3.75Ω
ts
tf
0.12
0.25
2
SAVANTIC [ Savantic, Inc. ]
