SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage,fast speed
·Low collector saturation voltage
APPLICATIONS
·Specially intended for operating
In industrial applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUW12 BUW12A
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
BUW12
BUW12A
BUW12
BUW12A
Open emitter
CONDITIONS
VALUE
850
1000
400
450
9
8
20
4
T
C
=25
125
150
-65~175
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
Open base
Open collector
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.2
UNIT
/W