SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High collector-emitter voltage
·Low collector saturation voltage
APPLICATIONS
·Designed for medium to high voltage
inverters, converters, regulators and
switching circuits.
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
MJ410
Fig.1 simplified outline (TO-3) and symbol
Collector
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
200
5
5
10
2
100
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
0.75
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
