SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type MJE15033
·High transition frequency
·DC current gain specified to 5.0 amperes
h
FE
= 50 (Min) @ I
C
= 0.5 Adc
h
FE
= 10 (Min) @ I
C
= 2.0 Adc
APPLICATIONS
·Designed for use as high–frequency
drivers in audio amplifiers
.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJE15032
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
a
=25
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
250
250
5
8
16
2
2
W
50
150
-65~150
UNIT
V
V
V
A
A
A
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
R
th j-A
PARAMETER
Thermal resistance ; junction to case
Thermal resistance , junction to ambient
MAX
2.5
62.5
UNIT
/W
/W
SAVANTIC [ Savantic, Inc. ]
