SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJE170/171/172
DESCRIPTION
·With TO-126 package
·Complement to type MJE180/181/182
APPLICATIONS
·For low power audio amplifier and low
current, high speed switching applications
PINNING (see Fig.2)
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
PARAMETER
MJE170
V
CBO
Collector-base voltage
MJE171
MJE172
MJE170
V
CEO
Collector-emitter voltage
MJE171
MJE172
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25
Collector power dissipation
T
C
=25
Junction temperature
Storage temperature
12.5
150
-65~150
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-60
-80
-100
-40
-60
-80
-7
-3
-6
-1
1.5
W
V
A
A
A
V
V
UNIT