SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE180/181/182
DESCRIPTION
·With TO-126 package
·Complement to type MJE170/171/172
APPLICATIONS
·For low power audio amplifier and low
current high speed switching applications
PINNING (see Fig.2)
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
PARAMETER
MJE180
V
CBO
Collector-base voltage
MJE181
MJE182
MJE180
V
CEO
Collector-emitter voltage
MJE181
MJE182
V
EBO
I
C
I
CM
I
B
P
C
T
i
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25
Collector power dissipation
T
C
=25
Junction temperature
Storage temperature
12.5
150
-65~150
Open collector
Open base
Open emitter
CONDITIONS
VALUE
60
80
100
40
60
80
7
3
6
1
1.5
W
V
A
A
A
V
V
UNIT
SAVANTIC [ Savantic, Inc. ]
