SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE18006
DESCRIPTION
·With TO-220C package
·High voltage ,high speed
APPLICATIONS
·Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1000
450
9
6
15
4
8
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
R
th j-A
PARAMETER
Thermal resistance junction to case
Thermal resistance junction to ambient
MAX
1.25
62.5
UNIT
/W
/W