SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE3055T
DESCRIPTION
·With TO-220 package
·Complement to type MJE2955T
·DC current gain -h
FE
= 20–70 @ I
C
= 4 Adc
·Collector–emitter saturation voltage -
V
CE(sat)
= 1.1 Vdc (Max) @ I
C
= 4 Adc
APPLICATIONS
·Designed for general–purpose
switching and amplifier applications.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
70
60
5
10
6
75
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.67
UNIT
/W
SAVANTIC [ Savantic, Inc. ]
