SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
DC current gain
DC current gain
Collector output capacitance
Transition frequency
CONDITIONS
I
B
=500mA ;V
BE
=-1.7V;L=40mH
I
E
=1mA ;I
C
=0
I
C
=4.5A ;I
B
=2.0A
I
C
=4.5A ;I
B
=1.0A
I
C
=4.5A ;I
B
=1.0A
V
CB
=1500V; V
BE
=0
I
C
=1A ; V
CE
=5V
I
C
=4.5A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.1A ; V
CE
=10V
10
4.5
95
2
MIN
700
5
TYP.
S2000N
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
(sat)
I
CBO
h
FE-1
h
FE-2
C
OB
f
T
MAX
UNIT
V
V
1.0
5.0
1.2
1.0
30
9
V
V
V
mA
pF
MHz
Switching times
t
s
t
f
Storage time
Fall time
I
CP
=4.5A;I
B1(
end
)
=1.0A
f
H
=15.75kHz
8
0.4
12
0.7
µs
µs
2
SAVANTIC [ Savantic, Inc. ]
