SavantIC Semiconductor
Product Specification
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
TIP110
V
CEO(SUS)
Collector-emitter
sustaining voltage
TIP111
TIP112
V
CE(
sat
)
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
TIP110
I
CBO
Collector
cut-off current
TIP111
TIP112
TIP110
I
CEO
Collector
cut-off current
TIP111
TIP112
I
EBO
h
FE-1
h
FE-2
C
OB
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
I
C
=2A ,I
B
=8mA
I
C
=2A ; V
CE
=4V
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
V
CB
=100V, I
E
=0
V
CE
=30V, I
B
=0
V
CE
=40V, I
B
=0
V
CE
=50V, I
B
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=4V
I
C
=2A ; V
CE
=4V
I
E
=0 ; V
CB
=10V,f=0.1MHz
I
C
=30mA, I
B
=0
CONDITIONS
SYMBOL
TIP110/111/112
MIN
60
80
100
TYP.
MAX
UNIT
V
2.5
2.8
V
V
1
mA
2
mA
2
1000
500
100
mA
pF
2
SAVANTIC [ Savantic, Inc. ]
